TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Santa Clara, CA and Kyoto, Japan, April 25, 2023 (GLOBE NEWSWIRE) -- Kyoto-based ROHM Semiconductor and Semikron Danfoss have been collaborating for more than ten years with regards to the ...

Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...

New IXIDM1401 driver module combines supreme compactness with the highest performance and reliability. IXYS’ objective is to serve the market with IGBT driver parts that enable a short design circle ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge insulated‑gate bipolar transistor (IGBT) module, designed for high‑performance ...

The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...